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PZT2222A Datasheet(PDF) 2 Page - Weitron Technology

Part No. PZT2222A
Description  NPN Silicon Planar Epitaxial Transistor
Download  4 Pages
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Maker  WEITRON [Weitron Technology]
Homepage  http://www.weitron.com.tw
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PZT2222A Datasheet(HTML) 2 Page - Weitron Technology

   
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PZT2222A
WEITRON
http://www.weitron.com.tw
ELECTRICALCHARACTERISTICS
Continued
(T A = 25 C unless otherwise noted)
C harac teris tic
S ymbol
Min
Max
Unit
OFF CHARACTERISTICS (continued)
Collector-Base Cutoff Current
(V CB = 60 Vdc, IE = 0)
(V CB = 60 Vdc, IE = 0, TA = 125 C)
ICBO
-
-
10
10
nAdc
uAdc
ON CHARACTERISTICS
DC Current Gain
(I C = 0.1 mAdc, VCE = 10 Vdc)
(I C = 1.0 mAdc, VCE = 10 Vdc)
(I C = 10 mAdc, V CE = 10 Vdc)
(I C = 10 mAdc, V CE = 10 Vdc, TA = - 55 C)
(I C = 150 mAdc, VCE = 10 Vdc)
(I C = 150 mAdc, VCE = 1.0 Vdc)
(I C = 500 mAdc, VCE = 10 Vdc)
hFE
35
50
70
35
100
50
40
-
-
-
-
300
-
-
-
Collector-Emitter Saturation Voltages
(I C = 150 mAdc, IB= 15 mAdc)
(I C = 500 mAdc, IB= 50 mAdc)
V CE(sat)
-
-
0.3
1.0
Vdc
Base-Emitter Saturation Voltages
(I C = 150 mAdc, IB = 15 mAdc)
(I C = 500 mAdc, IB = 50 mAdc)
V BE( sat)
0.6
-
1.2
2.0
Vdc
Input Impedance 5
(V CE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(V CE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
5hie5
2.0
0.25
8.0
1.25
k
Voltage Feedback Ratio
(V CE= 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(V CE= 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hre
-
-
8.0x10-4
4.0x10-4
-
Small-Signal Current Gain
(V CE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(V CE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hfe
50
75
300
375
-
Output Admittance 5
(V CE = 10 Vdc, IC= 1.0 mAdc, f = 1.0 kHz)
(V CE = 10 Vdc, IC= 10 mAdc, f = 1.0 kHz)
5hoe5
5.0
25
35
200
umhos
Noise Figure (V CE = 10 Vdc, IC = 100 uAdc, f = 1.0 kHz)
F
-
4.0
dB
DYNAMICCHARACTERISTICS
Current-Gain
Bandwidth Product
(I C = 20 mAdc, V CE = 20 Vdc, f = 100 MHz)
fT
300
-
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cc
-
-
-
8.0
pF
Input Capacitance
(V EB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ce
-
25
pF
SWITCHINGTIMES
(TA = 25 C)
Delay Time
(V CC = 30 Vdc, IC = 150 mAdc,
I
= 15 mAdc, V EB(off) = 0 .5Vdc)
td
-
10
ns
Rise Time
I B(on)
f)
Figure 1
tr
-
25
Storage Time
(V CC = 30 Vdc, IC = 150 mAdc,
IB(on ) = IB( ff) = 15 mAdc)
ts
-
225
ns
Fall Time
I
= IB(off)
Figure 2
tf
-
60


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