MAXIMUM RATINGS

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Symbol

VCEO

VCBO

VEBO

Value

Unit

Vdc

Vdc

Vdc

Rating

Characteristics

Symbol

Min

Max

Unit

ELECTRICAL CHARACTERISTICS

Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)

Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0)

Emitter-Base Breakdown Voltage (IE= 10 uAdc, IC=0)

Collector Cutoff Current (VCB= 25Vdc, I E=0)

Emitter Cutoff Current (VEB= 2.0 V c, I =0)

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICBO

IEBO

3.0

-

-

-

-

-

100

Vdc

Vdc

Vdc

nAdc

nAdc

MMBTH10

NPN Silicon VHF/UHF Transistor

(Ta=25 C)

25

30

3.0

THERMAL CHARACTERISTICS

Total Device Dissipation FR-5 Board

T =25 C

Derate above 25 C

Thermal Resistance, Junction Ambient

Symbol

Value

Unit

mW

Characteristics

1.8

556

T

225

Device Marking

MMBTH10=3EM

25

30

100

d

C

(1)

A

PD

mW/ C

C/W

R JA

J, Tstg

Junction and Storage, Temperature

-55 to +150

C

1. FR-5=1.0 0.75 0.062 in

I

I

I

I

SOT-23

1

2

3

COLLECTOR

EMITTER

BASE

θ

WEITRON

http://www.weitron.com.tw

1/5

29-Aug-05

Lead(Pb)-Free

P b

50

I C

Collector Current - Continuous

mAdc