ABSOLUTE MAXIMUM RATINGS

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base VOltage

Collector Current (DC)

Symbol

VCEO

VCBO

VEBO

IC(DC)

PNP/2SB772

30

NPN/2SD882

Unit

Vdc

Vdc

Vdc

Adc

Rating

Characteristics

Symbol

Min

Max

Unit

ELECTRICAL CHARACTERISTICS

Collector-Emitter Breakdown Voltage (IC= -10/10 mAdc, IB=0)

Collector-Base Breakdown Voltage (IC= -100/100 µAdc, IE=0)

Emitter-Base Breakdown Voltage (IE= -100/100 µAdc, IC=0)

Collector Cutoff Current (VCE= -30/30 Vdc, I =0)

Collector Cutoff Current (VCB= -40/40 Vdc, IE=0)

Emitter Cutoff Current (VEB= -6.0/6.0V c, I =0)

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICE0

ICBO

IEBO

-5.0/5.0

-

-

-

-

-

-

-1.0/1.0

Vdc

Vdc

Vdc

uAdc

uAdc

uAdc

2SB772

TO-126

Tstg

PD

PD

C

C

WEITRON

http://www.weitron.com.tw

PNP/NPN Epitaxial Planar Transistors

(Ta=25 C)

-40

-5.0

-3.0

40

5.0

3.0

-30

Collector Current (Pulse)

I (Pulse)

I (Pulse)

-7.0

7.0

Adc

Adc

Base Current

(1)

-0.6

0.6

Total Device Dissipation Tc=25 C

10

W

W

Junction Temperature

T j

150

Storage, Temperature

-55 to +150

Device Marking

2SB772=B772 ,

2SD882=D882

-30/30

-40/40

-1.0/1.0

-1.0/1.0

d

NOTE: 1.PW 350us, duty cycle 2%

3.BASE

2.COLLECTOR

1.EMITTER

C

B

B

C

2SD882

Total Device Disspation T =25 C

A

1.0

1

2

3