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2N4403 Datasheet(PDF) 1 Page - Weitron Technology

Part No. 2N4403
Description  General Purpose Transistors PNP Silicon
Download  7 Pages
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Maker  WEITRON [Weitron Technology]
Homepage  http://www.weitron.com.tw
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2N4403 Datasheet(HTML) 1 Page - Weitron Technology

   
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ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
2N4403
Unit
Vdc
Vdc
Vdc
mAdc
Rating
Characteristics
Symbol
Min
Max
Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -0.1 mAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -0.1 mAdc, IC=0)
Base Cutoff Current (VCB= -35 Vdc, IE=0)
Collect Cutoff Current(V
= -35 Vdc, I =0)
1. Pulse Test: Pulse Width 300 us, Duty Cycle 2.0%
<
<
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
I
-5.0
-
-
-
-
-
-0.1
Vdc
Vdc
Vdc
uAdc
uAdc
2N4403
Tstg
PD
C
C
WEITRON
http://www.weitron.com.tw
General Purpose Transistors
PNP Silicon
(Ta=25 C)
-40
-5.0
-600
-40
EMITTER
BASE
Total Device Dissipation T =25 C
-625
mW
Junction Temperature
T j
150
Storage Temperature
-55 to +150
-40
-40
-0.1
CE
B
CEO
A
TO-92
1
2
3
1. EMITTER
2. BASE
3. COLLECTOR
COLLECTOR
3
2
1
2N4403=2N4403
DEVICE MARKING
(1)


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