IS64WV1024BLL-15TA3 datasheet(5/17 Pages) ISSI

Part #	IS64WV1024BLL-15TA3

Description	128K x 8 HIGH-SPEED CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

Direct Link	http://www.issi.com

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5 / 17 page

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

5

Rev. B

05/10/06

ISSI®

IS63WV1024BLL

IS64WV1024BLL

CAPACITANCE(1)

Symbol

Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

6

pF

COUT

Input/Output Capacitance

VOUT = 0V

8

pF

Note:

1. Tested initially and after any design or process changes that may affect these parameters.

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

-12 ns

-15 ns

Symbol Parameter

Test Conditions

Options

Min.

Max.

Min.

Max.

Unit

ICC

VDD Dynamic Operating

VDD = Max.,

COM

.

—35

—

30

mA

Supply Current

IOUT = 0 mA, f = fMAX

IND

.

—45

—

40

AUTO

—60

—

50

typ.(2)

—20

—

20

ICC1

Operating Supply

VDD = Max.,

COM

.

—5

—

5

mA

Current

Iout = 0mA, f = 0

IND

.

—5

—

5

AUTO

—5

—

5

ISB1

TTL Standby Current

VDD = Max.,

COM

.

—3

—

3

mA

(TTL Inputs)

VIN = VIH or VIL

IND

.

—4

—

4

CE

≥ VIH, f = 0

AUTO

—4

—

4

ISB2

CMOS Standby

VDD = Max.,

COM

.

—20

—

20

uA

Current (CMOS Inputs)

CE

≥ VDD – 0.2V,

IND

.

—50

—

50

VIN

≥ VDD – 0.2V, or

AUTO

—75

—

75

VIN

≤ 0.2V, f = 0

typ.(2)

—6

—

6

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical values are measured at VDD=2.5V, TA=25oC. Not 100% tested.

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