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IS65WV12816ALL Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc

Part No. IS65WV12816ALL
Description  128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS65WV12816ALL Datasheet(HTML) 4 Page - Integrated Silicon Solution, Inc

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IS65WV12816ALL, IS65WV12816BLL
ISSI®
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00E
06/08/06
CAPACITANCE(1)
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
8
pF
COUT
Input/Output Capacitance
VOUT = 0V
10
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
Parameter
Test Conditions
Vdd
Min.
Max.
Unit
VOH
Output HIGH Voltage
IOH = -0.1 mA
1.65-2.2V
1.4
V
IOH = -1 mA
2.5-3.6V
2.2
V
VOL
Output LOW Voltage
IOL = 0.1 mA
1.65-2.2V
0.2
V
IOL = 2.1 mA
2.5-3.6V
0.4
V
VIH
Input HIGH Voltage
1.65-2.2V
1.4
VDD + 0.2
V
2.5-3.6V
2.2
VDD + 0.3
V
VIL(1)
Input LOW Voltage
1.65-2.2V
–0.2
0.4
V
2.5-3.6V
–0.2
0.6
V
ILI
Input Leakage
GND
≤ VIN ≤ VDD
–1
1
µA
ILO
Output Leakage
GND
≤ VOUT ≤ VDD, Outputs Disabled
–1
1
µA
Notes:
1. VIL (min.) = –1.0V for pulse width less than 10 ns.


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