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IS64LV6416L Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc |
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IS64LV6416L Datasheet(HTML) 4 Page - Integrated Silicon Solution, Inc |
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4 / 14 page 
IS64LV6416L 4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. C 05/02/03 ISSI® CAPACITANCE(1) Symbol Parameter Conditions Max. Unit CIN Input Capacitance VIN = 0V 6 pF COUT Input/Output Capacitance VOUT = 0V 8 pF Note: 1. Tested initially and after any design or process changes that may affect these parameters. POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) -10 ns -12 ns Symbol Parameter Test Conditions Min. Max. Min. Max. Unit ICC VDD Dynamic Operating VDD = Max., A1 — 95 — — mA Supply Current IOUT = 0 mA, f = fMAX A2 — — — 105 A3 — — — 115 ISB1 TTL Standby Current VDD = Max., A1 — 15 — — mA (TTL Inputs) VIN = VIH or VIL A2 — — — 18 CE ≥ VIH , f = 0 A3 — — — 20 ISB2 CMOS Standby VDD = Max., A1 — 2 — — mA Current (CMOS Inputs) CE ≥ VDD – 0.2V, A2 — — — 3 VIN ≥ VDD – 0.2V, or A3 — — — 5 VIN ≤ 0.2V, f = 0 typ(2) — 0.5 — 0.5 Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical values are measured at VDD = 3.3V, TA = 25oC and not 100% tested. |
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