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IS64LV6416L Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc

Part No. IS64LV6416L
Description  64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
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Maker  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS64LV6416L Datasheet(HTML) 4 Page - Integrated Silicon Solution, Inc

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IS64LV6416L
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
05/02/03
ISSI®
CAPACITANCE(1)
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
COUT
Input/Output Capacitance
VOUT = 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-10 ns
-12 ns
Symbol Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
ICC
VDD Dynamic Operating
VDD = Max.,
A1
95
mA
Supply Current
IOUT = 0 mA, f = fMAX
A2
105
A3
115
ISB1
TTL Standby Current
VDD = Max.,
A1
15
mA
(TTL Inputs)
VIN = VIH or VIL
A2
18
CE
≥ VIH , f = 0
A3
20
ISB2
CMOS Standby
VDD = Max.,
A1
2
mA
Current (CMOS Inputs)
CE
≥ VDD – 0.2V,
A2
3
VIN
≥ VDD – 0.2V, or
A3
5
VIN
≤ 0.2V, f = 0
typ(2)
0.5
0.5
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.3V, TA = 25oC and not 100% tested.


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