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IS62WV51216ALL Datasheet(PDF) 1 Page - Integrated Silicon Solution, Inc

Part No. IS62WV51216ALL
Description  512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS62WV51216ALL Datasheet(HTML) 1 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
1
Rev. B
02/24/05
IS62WV51216ALL
IS62WV51216BLL
ISSI®
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
512K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 45ns, 55ns
• CMOS low power operation
– 36 mW (typical) operating
– 12 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
– 1.65V--2.2V VDD (62WV51216ALL)
– 2.5V--3.6V VDD (62WV51216BLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
DESCRIPTION
The
ISSI IS62WV51216ALL/ IS62WV51216BLL are high-
speed, 8M bit static RAMs organized as 512K words by 16
bits. It is fabricated using
ISSI's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
When
CS1 is HIGH (deselected) or when CS2 is LOW
(deselected) or when
CS1 is LOW, CS2 is HIGH and both
LB and UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte
(UB) and Lower Byte (LB)
access.
TheIS62WV51216ALLandIS62WV51216BLLarepackaged
in the JEDEC standard 48-pin mini BGA (7.2mm x 8.7mm)
and 44-Pin TSOP (TYPE II).
FUNCTIONAL BLOCK DIAGRAM
FEBRUARY 2005
A0-A18
CS1
OE
WE
512K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
UB
LB
CS2


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