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IS61WV102416ALL Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc |
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IS61WV102416ALL Datasheet(HTML) 4 Page - Integrated Silicon Solution, Inc |
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4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 02/13/06 ISSI® IS61WV102416ALL IS61WV102416BLL IS64WV102416BLL ABSOLUTE MAXIMUM RATINGS(1) Symbol Parameter Value Unit VTERM Terminal Voltage with Respect to GND –0.5 to VDD + 0.5 V VDD VDD Relates to GND –0.3 to 4.0 V TSTG Storage Temperature –65 to +150 °C PT Power Dissipation 1.0 W Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE(1,2) Symbol Parameter Conditions Max. Unit CIN Input Capacitance VIN = 0V 6 pF CI/O Input/Output Capacitance VOUT = 0V 8 pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V. TRUTH TABLE I/O PIN Mode WE WE WE WE WE CE CE CE CE CE OE OE OE OE OE LB LB LB LB LB UB UB UB UB UB I/O0-I/O7 I/O8-I/O15 VDD Current Not Selected X H X X X High-Z High-Z ISB1, ISB2 Output Disabled H L H X X High-Z High-Z ICC X L X H H High-Z High-Z Read H L L L H DOUT High-Z ICC H L L H L High-Z DOUT H LLL L DOUT DOUT Write L L X L H DIN High-Z ICC L L X H L High-Z DIN LL X L L DIN DIN |
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