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IS61WV102416ALL Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc

Part No. IS61WV102416ALL
Description  1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
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Maker  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61WV102416ALL Datasheet(HTML) 4 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
02/13/06
ISSI®
IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
VTERM
Terminal Voltage with Respect to GND
–0.5 to VDD + 0.5
V
VDD
VDD Relates to GND
–0.3 to 4.0
V
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1.0
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
CI/O
Input/Output Capacitance
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
TRUTH TABLE
I/O PIN
Mode
WE
WE
WE
WE
WE
CE
CE
CE
CE
CE
OE
OE
OE
OE
OE
LB
LB
LB
LB
LB
UB
UB
UB
UB
UB
I/O0-I/O7
I/O8-I/O15
VDD Current
Not Selected
X
H
X
X
X
High-Z
High-Z
ISB1, ISB2
Output Disabled
H
L
H
X
X
High-Z
High-Z
ICC
X
L
X
H
H
High-Z
High-Z
Read
H
L
L
L
H
DOUT
High-Z
ICC
H
L
L
H
L
High-Z
DOUT
H
LLL
L
DOUT
DOUT
Write
L
L
X
L
H
DIN
High-Z
ICC
L
L
X
H
L
High-Z
DIN
LL
X
L
L
DIN
DIN


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