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MRF21120 Datasheet(PDF) 6 Page - Motorola, Inc

Part No. MRF21120
Description  The RF Sub-Micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode Lateral MOSFET
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MRF21120 Datasheet(HTML) 6 Page - Motorola, Inc

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MRF21120
6
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
Figure 3. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
9
10
Figure 4. Intermodulation Distortion
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
1.0
0.10
0.10
13
Figure 5. Class AB Broadband
Circuit Performance
13
f, FREQUENCY (MHz)
5
Figure 6. 2.17 GHz W–CDMA Mask at
14 Watts (Avg.), 5 MHz Offset, 15 DTCH, 1 Perch
Center 2.17 GHz
Figure 7. Power Gain, Efficiency, ACPR
versus Output Power (W–CDMA)
Pout, OUTPUT POWER (WATTS) AVG.
10
2100
12
14
14
7
11
2140
11
2200
1.0
8
10
2
100
12
-60
-20
-50
-30
-40
-32
40
-26
-30
50
45
35
12
9
2180
2120
2160
Gps
η
-100
-60
-30
-80
-40
-20
-10
10
Figure 8. Power Gain, Efficiency, IMD
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
10
12
13
7
100
1.0
9
11
5
1800 mA
1500 mA
1300 mA
1100 mA
1000 mA
850 mA
600 mA
VDD = 28 Vdc
f1 = 2170.0 MHz
f2 = 2170.1 MHz
1.0
10
100
1800 mA
600 mA
850 mA
1100 mA
1000 mA
1300 mA
1500 mA
VDD = 28 Vdc
f1 = 2170.0 MHz
f2 = 2170.1 MHz
-28
-24
10
6
8
VSWR
IMD
VDD = 28 Vdc, IDQ = 2 x 500 mA
Two-Tone, 100 kHz Tone Spacing
2.0
1.0
1.5
1.5 MHz
Span 15 MHz
-70
-90
-50
c11
c11
c0
c0
cu1
cu1
1RM
Ref Lv1
-5 dBm
MARKER 1 [T1]
-22.77 dBm
2.17000000 GHz
RBW
VBW
SWT
30 kHZ
1 MHz
2 s
RF Att
Unit
10 dB
dBm
4
6
20
-40
60
40
0
-60
-20
Gps
η
ACPR UP
ACPR DOWN
VDD = 28 Vdc
IDQ = 2 x 750 mA
f = 2170 MHz
6
8
10
20
-60
80
40
0
-80
-40
-20
60
Gps
η
IMD
VDD = 28 Vdc, IDQ = 2 x 500 mA
f = 2170.0 MHz, f2 = 2170.1 MHz
0.10
1
CH PWR
ACR UP
ACR LOW
1 [T1]
A
-22.77 dBm
2.17000000 GHz
-2.95 dBm
-45.14 dB
-45.45 dB


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