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IS64LV51216 Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc

Part No. IS64LV51216
Description  512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
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Maker  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS64LV51216 Datasheet(HTML) 4 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
12/06/05
ISSI®
IS61LV51216
IS64LV51216
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-8
-10
-12
Symbol Parameter
Test Conditions
Min. Max.
Min. Max.
Min. Max.
Unit
ICC
VDD Dynamic Operating
VDD = Max.,
Com.
110
100
90
mA
Supply Current
IOUT = 0 mA, f = fMAX
Ind.
120
110
100
Auto.
120
ISB1
TTL Standby Current
VDD = Max.,
Com.
30
30
30
mA
(TTL Inputs)
VIN = VIH or VIL
Ind.
35
35
35
CE
≥ VIH, f = 0
Auto.
40
ISB2
CMOS Standby
VDD = Max.,
Com.
20
20
20
mA
Current (CMOS Inputs)
CE
≥ VDD – 0.2V,
Ind.
25
25
25
VIN
≥ VDD – 0.2V, or
Auto.
30
VIN
≤ 0.2V, f = 0
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
VDD = Min., IOH = –4.0 mA
2.4
V
VOL
Output LOW Voltage
VDD = Min., IOL = 8.0 mA
0.4
V
VIH
Input HIGH Voltage
2.2
VDD + 0.3
V
VIL
Input LOW Voltage(1)
–0.3
0.8
V
ILI
Input Leakage
GND
≤ VIN ≤ VDD
Com.
–1
1
µA
Ind.
–5
5
Auto.
-10
-10
ILO
Output Leakage
GND
≤ VOUT ≤ VDD
Com.
–1
1
µA
Outputs Disabled
Ind.
–5
5
Auto.
-10
-10
Notes:
1. VIL (min.) = –2.0V for pulse width less than 10 ns.
OPERATING RANGE
Range
Ambient Temperature
VDD
Commercial
0°C to +70°C
3.3V +10%, -5%
Industrial
–40°C to +85°C
3.3V +10%, -5%
Automotive
–40°C to +125°C
3.3V +10%, -5%


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