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IS61DDB42M18-250M3 Datasheet(PDF) 8 Page - Integrated Silicon Solution, Inc |
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IS61DDB42M18-250M3 Datasheet(HTML) 8 Page - Integrated Silicon Solution, Inc |
8 / 26 page 8 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 07/09/04 ISSI® 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs Timing Reference Diagram for Truth Table Clock Truth Table (Use the following table with the Timing Reference Diagram for Truth Table.) Mode Clock Controls Data Out / Data In KLD tt+1 t+2 tW A QA QA+1 K Clock K Clock LD Clock Cycle tW+1 DB DB+1 NOP Read A B Write B tW+2 DB+2 DB+3 Clock LD R / W BW 0,1,2,3 Address Data-In/Out (DQ) C Clock C tt+1 t+2 tW A QA QA+1 K Clock K BW 0,1,2,3 Address Data-In/Out (DQ) C Clock C B Write B tt+1 t+2 tW A QA QA+1 K Clock K 0,1,2,3 Address Data-In/Out (DQ) C Clock C tW+1 DB DB+1 NOP Read A tW+2 DB+2 DB+3 QA+2 QA+3 0,1,2,3 Address Data-In/Out (DQ) C Clock C Clock CQ Clock CQ Clock Cycle Timing Reference Diagram for Truth Table Clock Truth Table (Use the following table with the Timing Reference Diagram for Truth Table.) Mode Clock Controls Data Out / Data In KLD R/W QA / DB QA+1 / DB+1 QA+2 / DB+2 QA+3 / DB+3 Stop Clock Stop X X Previous State Previous State Previous State Previous State No Operation (NOP) L →H H H High-Z High-Z High-Z High-Z Read B L →H LH Dout at C (t + 1.5) Dout at C (t + 2) Dout at C (t + 2.5) Dout at C (t + 3) Write A L →HL L DB (tW + 1) DB (tW + 1.5) DB (tW + 2) DB (tW + 2.5) Notes: 1. The internal burst counter is always fixed as two-bit. 2. X = don’t care; H = logic “1”; L = logic “0”. 3. A read operation is started when control signal R/W is active high. 4. A write operation is started when control signal R/W is active low. 5. Before entering into the stop clock, all pending read and write commands must be completed. 6. For timing definitions, refer to the AC Characteristics on page 16. Signals must have AC specifications at timings indicated in parenthesis with respect to switching clocks K, K, C, and C. |
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