IS61C1024AL-12J datasheet(3/17 Pages) ISSI

Part #	IS61C1024AL-12J

Description	128K x 8 HIGH-SPEED CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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3 / 17 page

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

3

Rev. B

01/24/05

IS61C1024AL, IS64C1024AL

ISSI®

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Parameter

Value

Unit

VTERM

Terminal Voltage with Respect to GND

–0.5 to +7.0

V

TSTG

Storage Temperature

–65 to +150

°C

PT

Power Dissipation

1.5

W

IOUT

DC Output Current (LOW)

20

mA

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation

of the device at these or any other conditions above those indicated in the opera-

tional sections of this specification is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect reliability.

CAPACITANCE(1,2)

Symbol

Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

5

pF

COUT

Output Capacitance

VOUT = 0V

7

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

Test Conditions

Min.

Max.

Unit

VOH

Output HIGH Voltage

VDD = Min., IOH = –4.0 mA

2.4

—

V

VOL

Output LOW Voltage

VDD = Min., IOL = 8.0 mA

—

0.4

V

VIH

Input HIGH Voltage

2.2

VDD + 0.5

V

VIL

Input LOW Voltage(1)

–0.3

0.8

V

ILI

Input Leakage

GND

≤ VIN ≤ VDD

Com.

–1

1

µA

Ind.

–2

2

Auto.

–5

5

ILO

Output Leakage

GND

≤ VOUT ≤ VDD

Com.

–1

1

µA

Outputs Disabled

Ind.

–2

2

Auto.

–5

5

Note:

1. VIL = –3.0V for pulse width less than 10 ns.

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