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IS42VS16100C1 Datasheet(PDF) 33 Page - Integrated Silicon Solution, Inc

Part # IS42VS16100C1
Description  512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS42VS16100C1 Datasheet(HTML) 33 Page - Integrated Silicon Solution, Inc

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IS42VS16100C1
ISSI®
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
33
Rev. 00A
04/15/05
Read Cycle (Full Page) Interruption Using
the Burst Stop Command
The IS42VS16100C1 can output data continuously from
the burst start address (a) to location a+255 during a read
cycle in which the burst length is set to full page. The
IS42VS16100C1 repeats the operation starting at the 256th
cycle with the data output returning to location (a) and
continuing with a+1, a+2, a+3, etc. A burst stop command
must be executed to terminate this cycle. A precharge
command must be executed within the ACT to PRE
command period (tRAS max.) following the burst stop
command.
After the period (tRBD) required for burst data output to
stop following the execution of the burst stop command
has elapsed, the outputs go to the HIGH impedance
state. This period (tRBD) is two clock cycle when the
CAS latency is two and three clock cycle when the CAS
latency is three.
CAS
CAS
CAS
CAS
CAS Latency
3
2
tRBD
32
BST
READ A0
COMMAND
DQ
CLK
tRBD
READ (CA=A, BANK 0)
BURST STOP
HI-Z
DOUT A0
DOUT A0
DOUT A1
DOUT A2
COMMAND
DQ
CLK
tRBD
READ A0
READ (CA=A, BANK 0)
BURST STOP
BST
HI-Z
DOUT A0 DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A3
CAS latency = 3, burstlength = 4
CAS latency = 2, burstlength = 4


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