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IS41LV44002B-50JL Datasheet(PDF) 3 Page - Integrated Silicon Solution, Inc |
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IS41LV44002B-50JL Datasheet(HTML) 3 Page - Integrated Silicon Solution, Inc |
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3 / 21 page  Integrated Silicon Solution, Inc. — 1-800-379-4774 3 Rev. A 07/05/06 IS41LV44002B ISSI® Functional Description The IS41LV44002B is a CMOS DRAMs optimized for high-speed bandwidth, low power applications. During READ or WRITE cycles, each bit is uniquely addressed through the 11 address bits. These are entered 11 bits (A0-A10) at a time for the 2K refresh device. The row address is latched by the Row Address Strobe ( RAS). The column address is latched by the Column Address Strobe ( CAS). RAS is used to latch the first nine bits and CAS is used the latter ten bits. Memory Cycle A memory cycle is initiated by bringing RAS LOW and it is terminated by returning both RAS and CAS HIGH. To ensures proper device operation and data integrity any memory cycle, once initiated, must not be ended or aborted before the minimum tRAS time has expired. A new cycle must not be initiated until the minimum precharge time tRP, tCP has elapsed. Read Cycle A read cycle is initiated by the falling edge of CAS or OE, whichever occurs last, while holding WE HIGH. The column address must be held for a minimum time specified by tAR. Data Out becomes valid only when tRAC, tAA, tCAC and tOEA are all satisfied. As a result, the access time is dependent on the timing relationships between these parameters. Write Cycle A write cycle is initiated by the falling edge of CAS and WE, whichever occurs last. The input data must be valid at or before the falling edge of CAS or WE, whichever occurs last. Auto Refresh Cycle To retain data, 2,048 refresh cycles are required in each 32 ms period. There are two ways to refresh the memory: 1. By clocking each of the 2,048 row addresses (A0 through A10) with RAS at least once every 32 ms. Any read, write, read-modify-write or RAS-only cycle re- freshes the addressed row. 2. Using a CAS-before-RAS refresh cycle. CAS-before-RAS refresh is activated by the falling edge of RAS, while holding CAS LOW. In CAS-before-RAS refresh cycle, an internal 9-bit counter provides the row addresses and the external address inputs are ignored. CAS-before-RAS is a refresh-only mode and no data access or device selection is allowed. Thus, the output remains in the High-Z state during the cycle. Power-On After application of the VDD supply, an initial pause of 200 µs is required followed by a minimum of eight initialization cycles (any combination of cycles containing a RAS signal). During power-on, it is recommended that RAS track with VDD or be held at a valid VIH to avoid current surges. |
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