2

FN9260.0

March 9, 2006

Absolute Maximum Ratings (Reference to GND)

Thermal Information

Supply Voltage (VDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V

ESD Rating

Human Body Model (Per MIL-STD-883 Method 3015.7) . . .4000V

Machine Model (Per EIAJ ED-4701 Method C-111). . . . . . . .400V

CDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V

Recommended Operating Conditions

Ambient Temperature Range . . . . . . . . . . . . . . . . . . . .-20°C to 85°C

Thermal Resistance (Typical, Note 1)

SOT-23 Package . . . . . . . . . . . . . . . . . . . . . . . . . . .

200

Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C

Maximum Storage Temperature Range . . . . . . . . . . . -40°C to 125°C

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1.

Electrical Specifications

Unless otherwise noted, all parameters are guaranteed over the operational supply voltage and temperature

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

DC CHARACTERISTICS

Supply Voltage

During normal operation

2.6

-

4.8

V

During OTP ROM programming

2.8

-

4.8

V

Run Mode Supply Current

(exclude I/O current)

-

110

140

µA

-

120

160

µA

Sleep Mode Supply Current:

-

0.15

0.5

µA

OTP Programming Mode Supply Current

For ~ 1.8ms duration per write operation

-

250

500

µA

Internal Regulated Supply Voltage

Observable only in test mode

2.3

2.5

2.7

V

Internal OTP ROM Programming Voltage

Observable only in test mode

11

12

13

V

POR Release Threshold

1.9

2.2

2.4

V

POR Assertion Threshold

1.5

1.8

2.1

V

XSD PIN CHARACTERISTICS

XSD Input Low Voltage

-0.4

-

0.5

V

XSD Input High Voltage

1.5

-

0.4V

V

XSD Input Hysteresis

-

400

-

mV

XSD Internal Pull-Down Current

-

0.8

-

µA

-

1.2

2.0

µA

-

1.8

2.5

µA

XSD Output Low Voltage

-

-

0.4

V

XSD Input Transition Time

10% to 90% transition time

-

-

2

µs

XSD Output Fall Time

-

-

50

ns

XSD Pin Capacitance

-6

-

pF

XSD BUS TIMING CHARACTERISTICS (Refer to XSD Bus Symbol Timing Definitions Tables)

Programming Bit Rate

x = 0.5 to 4

2.89

-

23.12

kHz

XSD Input Deglitch Time

Pulse width narrower than the deglitch time

will not cause the device to wake up

7-

20

µs

Device Wake-Up Time

From falling-edge of break command issued

by host to falling-edge of break command

returned by device

35

60

100

µs

ISL9206