IC62C1024AL-45WI datasheet(4/9 Pages) ICSI

Part #	IC62C1024AL-45WI

Description	128K x 8 Low Power CMOS SRAM

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Manufacturer	ICSI [Integrated Circuit Solution Inc]

Direct Link	http://www.icsi.com.tw

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Integrated Circuit Solution Inc.

ALSR009-0A 5/7/2002

IC62C1024AL

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Parameter

Value

Unit

VTERM

Terminal Voltage with Respect to GND

–0.5 to + 7.0

V

TBIAS

Temperature Under Bias

–45 to + 85

°C

TSTG

Storage Temperature

–65 to + 150

°C

PT

Power Dissipation

1.5

W

IOUT

DC Output Current (LOW)

20

mA

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of the

device at these or any other conditions above those indicated in the operational sections of

this specification is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect reliability.

CAPACITANCE(1,2)

Symbol

Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

6

pF

COUT

Output Capacitance

VOUT = 0V

8

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

Test Conditions

Min.

Max.

Unit

VOH

Output HIGH Voltage

VCC = Min., IOH = –1.0 mA

2.4

—

V

VOL

Output LOW Voltage

VCC = Min., IOL = 2.1 mA

—

0.4

V

VIH

Input HIGH Voltage

2.2

VCC + 0.5

V

VIL

Input LOW Voltage(1)

–0.3

0.8

V

ILI

Input Leakage

GND

≤ VIN ≤ VCC

Com.

–2

2

µA

Ind.

–10

10

ILO

Output Leakage

GND

≤ VOUT ≤ VCC

Com.

–2

2

µA

Ind.

–10

10

Notes:

1. VIL = –3.0V for pulse width less than 10 ns.

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

-35 ns

-45 ns

-55 ns

-70 ns

Symbol Parameter

Test Conditions

Min. Max.

Unit

ICC

Vcc Dynamic Operating

VCC = Max.,

CE = VIL

Com.

—

100

—

90

—

80

—

70

mA

Supply Current

IOUT = 0 mA, f = fMAX

Ind.

—

110

—

100

—

90

—

80

ISB1

TTL Standby Current

VCC = Max.,

Com.

—

10

—

10

—

10

—

10

mA

(TTL Inputs)

VIN = VIH or VIL,

CE1 ≥ VIH, Ind.

—

15

—

15

—

15

—

15

or CE2

≤ VIL, f = 0

ISB2

CMOS Standby

VCC = Max.,

Com.

—

500

—

500

—

500

—

500

µA

Current (CMOS Inputs)

CE1 ≤ VCC – 0.2V,

Ind.

—

750

—

750

—

750

—

750

CE2

≤ 0.2V, VIN > VCC – 0.2V,

or VIN

≤ 0.2V, f = 0

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

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