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IC41C4100-60TI Datasheet(PDF) 9 Page - Integrated Circuit Solution Inc |
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IC41C4100-60TI Datasheet(HTML) 9 Page - Integrated Circuit Solution Inc |
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9 / 21 page  IC41C4100 IC41LV4100 Integrated Circuit Solution Inc. 9 DR027-0A 09/05/2001 AC CHARACTERISTICS (Continued)(1,2,3,4,5,6) (Recommended Operating Conditions unless otherwise noted.) 35 -50 -60 Symbol Parameter Min. Max. Min. Max. Min. Max. Units tACH Column-Address Setup Time to CAS 15 — 15 — 15 — ns Precharge during WRITE Cycle tOEH OE Hold Time from WE during 8 — 10 — 15 — ns READ-MODIFY-WRITE cycle(18) tDS Data-In Setup Time(15, 22) 0— 0— 0 — ns tDH Data-In Hold Time(15, 22) 6— 8— 10 — ns tRWC READ-MODIFY-WRITE Cycle Time 80 — 125 — 140 — ns tRWD RAS to WE Delay Time during 45 — 70 — 80 — ns READ-MODIFY-WRITE Cycle(14) tCWD CAS to WE Delay Time(14, 20) 25 — 34 — 36 — ns tAWD Column-Address to WE Delay Time(14) 30 — 42 — 49 — ns tPC EDO Page Mode READ or WRITE 12 — 20 — 25 — ns Cycle Time(24) tRASP RAS Pulse Width in EDO Page Mode 35 100K 50 100K 50 100K ns tCPA Access Time from CAS Precharge(15) —21 — 27 — 34 ns tPRWC EDO Page Mode READ-WRITE 40 — 47 — 56 — ns Cycle Time(24) tCOH Data Output Hold after CAS LOW 5— 5— 5 — ns tOFF Output Buffer Turn-Off Delay from 3 15 3 15 3 15 ns CAS or RAS(13,15,19, 29) tWHZ Output Disable Delay from WE 315 3 15 3 15 ns tCLCH Last CAS going LOW to First CAS 10 — 10 — 10 — ns returning HIGH(23) tCSR CAS Setup Time (CBR REFRESH)(30, 20) 8— 10 — 10 — ns tCHR CAS Hold Time (CBR REFRESH)(30, 21) 8— 10 — 10 — ns tORD OE Setup Time prior to RAS during 0 — 0 — 0 — ns HIDDEN REFRESH Cycle tREF Refresh Period (512 Cycles) — 8 8 — 8 — ms tT Transition Time (Rise or Fall)(2, 3) 150 1 50 1 50 ns AC TEST CONDITIONS Output load: Two TTL Loads and 50 pF (Vcc = 5.0V ±10%) One TTL Load and 50 pF (Vcc = 3.3V ±10%) Input timing reference levels: VIH = 2.4V, VIL = 0.8V (Vcc = 5.0V ±10%); VIH = 2.0V, VIL = 0.8V (Vcc = 3.3V ±10%) Output timing reference levels: VOH = 2.0V, VOL = 0.8V (Vcc = 5V ±10%, 3.3V ±10%) |
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