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MW6S010NR1 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc

Part No. MW6S010NR1
Description  RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
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Maker  FREESCALE [Freescale Semiconductor, Inc]
Homepage  http://www.freescale.com
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MW6S010NR1 Datasheet(HTML) 2 Page - Freescale Semiconductor, Inc

 
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RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1A
Machine Model (per EIA/JESD22-A115)
A
Charge Device Model (per JESD22-C101)
III
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 μAdc)
VGS(th)
1.5
2.3
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 125 mAdc)
VGS(Q)
3.1
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 0.3 Adc)
VDS(on)
0.27
0.35
Vdc
Dynamic Characteristics
Input Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
23
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
10
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
0.32
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 125 mA, Pout = 10 W PEP, f = 960 MHz,
Two-Tone Test, 100 kHz Tone Spacing
Power Gain
Gps
17.5
18
20.5
dB
Drain Efficiency
ηD
31
32
%
Intermodulation Distortion
IMD
-37
-33
dBc
Input Return Loss
IRL
-18
-10
dB
Typical Performances (In Freescale 450 MHz Demo Board, 50 οhm system) VDD = 28 Vdc, IDQ = 150 mA, Pout = 10 W PEP,
420-470 MHz, Two-Tone Test, 100 kHz Tone Spacing
Power Gain
Gps
20
dB
Drain Efficiency
ηD
33
%
Intermodulation Distortion
IMD
-40
dBc
Input Return Loss
IRL
-10
dB


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