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MW6S010NR1 Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc

Part No. MW6S010NR1
Description  RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
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Maker  FREESCALE [Freescale Semiconductor, Inc]
Homepage  http://www.freescale.com
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MW6S010NR1 Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc

 
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MW6S010NR1 MW6S010GNR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
• Typical Two-Tone Performance at 960 MHz: VDD = 28 Volts, IDQ =
125 mA, Pout = 10 Watts PEP
Power Gain — 18 dB
Drain Efficiency — 32%
IMD — -37 dBc
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• On-Chip RF Feedback for Broadband Stability
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
61.4
0.35
W
W/°C
Storage Temperature Range
Tstg
- 65 to +175
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1.2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 10 W PEP
RθJC
2.85
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MW6S010N
Rev. 3, 5/2006
Freescale Semiconductor
Technical Data
MW6S010NR1
MW6S010GNR1
450-1500 MHz, 10 W, 28 V
LATERAL N-CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265-08, STYLE 1
TO-270-2
PLASTIC
MW6S010NR1
CASE 1265A-02, STYLE 1
TO-270-2 GULL
PLASTIC
MW6S010GNR1
© Freescale Semiconductor, Inc., 2006. All rights reserved.


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