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MRF18085A Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MRF18085A
Description  The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
Download  8 Pages
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MRF18085A Datasheet(HTML) 2 Page - Motorola, Inc

   
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MRF18085A MRF18085AR3 MRF18085ALSR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
V(BR)DSS
65
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
10
µAdc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1
µAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µAdc)
VGS(th)
2
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 600 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
0.15
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
6.0
S
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
3.6
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Common–Source Amplifier Power Gain @ 85 W (2)
(VDD = 26 Vdc, IDQ = 800 mA, f = 1805 – 1880 MHz)
Gps
13.5
15
dB
Drain Efficiency @ 85 W (2)
(VDD = 26 Vdc, IDQ = 800 mA, f = 1805 – 1880 MHz)
η
48
52
%
Input Return Loss @ 85 W (2)
(VDD = 26 Vdc, IDQ = 800 mA, f = 1805 – 1880 MHz)
IRL
–12
–9
dB
Pout, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 800 mA, f = 1805 – 1880 MHz)
P1dB
83
90
Watts
Output Mismatch Stress @ P1dB
(VDD = 26 Vdc, IDQ = 800 mA, f = 1805 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch–to–batch
consistency.


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