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MRF18085A Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MRF18085A
Description  The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MRF18085A Datasheet(HTML) 1 Page - Motorola, Inc

   
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MRF18085A MRF18085AR3 MRF18085ALSR3
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Des i gned for GSM and GSM EDGE bas e station applic ations with
frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier
amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and
WLL applications. Specified for GSM–GSM EDGE 1805 – 1880 MHz.
• GSM and GSM EDGE Performance, Full Frequency Band
(1805–1880 MHz)
Power Gain – 15 dB (Typ) @ 85 Watts CW
Efficiency – 52% (Typ) @ 85 Watts CW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power,
@ f = 1805 MHz
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
µ″ Nominal.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
–0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
273
1.56
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +200
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
0.64
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Typical)
Machine Model
M3 (Typical)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF18085A/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF18085A
MRF18085AR3
MRF18085ALSR3
GSM/GSM EDGE
1.8 – 1.88 GHz, 85 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF18085A, MRF18085AR3
CASE 465A–06, STYLE 1
NI–780S
MRF18085ALSR3
Motorola, Inc. 2002
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