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STK12C68-IM Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers

Part No. STK12C68-IM
Description  CMOS nvSRAM 8K x 8 AutoStore Nonvolatile Static RAM Industrial Temperature/Military Screen
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Manufacturer  ETC1 [List of Unclassifed Manufacturers]
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STK12C68-IM Datasheet(HTML) 3 Page - List of Unclassifed Manufacturers

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43
STK12C68-IM
NO.
PARAMETER
UNITS
Note c: Bringing E
≥ VIH will not produce standby currents until any nonvolatile cycle in progress has timed out. See MODE SELECTION table.
Note e: Parameter guaranteed but not tested.
Note f: For READ CYCLE #1 and #2, W is high for entire cycle.
Note g: Device is continuously selected with E low and G low.
Note h: Measured
± 200mV from steady state output voltage.
READ CYCLE #1 f,g
DQ (Data Out)
ADDRESS
DATA VALID
2
tAVAV
3
tAVQV
5
tAXQX
READ CYCLES #1 & #2
SRAM MEMORY OPERATION
ADDRESS
E
G
DQ (Data Out)
DATA VALID
2
tAVAV
1
tELQV
6
tELQX
4
tGLQV
8
tGLQX
10
tELICCH
11
tEHICCL
7
tEHQZ
9
tGHQZ
ICC
ACTIVE
STANDBY
READ CYCLE #2 f
1tELQV
tACS
Chip Enable Access Time
25
35
45
ns
2tAVAV
tRC
Read Cycle Time
25
35
45
ns
3tAVQV
g
tAA
Address Access Time
25
35
45
ns
4tGLQV
tOE
Output Enable to Data Valid
10
20
25
ns
5tAXQX
tOH
Output Hold After Address Change
5
5
5
ns
6tELQX
tLZ
Chip Enable to Output Active
5
5
5
ns
7tEHQZ
h
tHZ
Chip Disable to Output Inactive
10
17
20
ns
8tGLQX
tOLZ
Output Enable to Output Active
0
0
0
ns
9tGHQZ
h
tOHZ
Output Disable to Output Inactive
10
17
20
ns
10
tELICCH
e
tPA
Chip Enable to Power Active
0
0
0
ns
11
tEHICCL
c,e
tPS
Chip Disable to Power Standby
25
35
45
ns
#1, #2
Alt.
MIN
MAX
MIN
MAX
MIN
MAX
SYMBOLS
STK12C68-25-IM
STK12C68-35-IM
STK12C68-45-IM
(VCC = 5.0V ± 10%)d


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