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NTF3055L175T3G Datasheet(PDF) 2 Page - ON Semiconductor |
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NTF3055L175T3G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page NTF3055L175 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS 60 − 72.8 74.4 − − Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS − − − − 1.0 10 mAdc Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) IGSS − − ± 100 nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 − 1.7 4.2 2.0 − Vdc mV/ °C Static Drain−to−Source On−Resistance (Note 3) (VGS = 5.0 Vdc, ID = 1.0 Adc) RDS(on) − 155 175 m W Static Drain−to−Source On−Resistance (Note 3) (VGS = 5.0 Vdc, ID = 2.0 Adc) (VGS = 5.0 Vdc, ID = 1.0 Adc, TJ = 150°C) VDS(on) − 0.32 0.57 0.42 − Vdc Forward Transconductance (Note 3) (VDS = 8.0 Vdc, ID = 1.5 Adc) gfs − 3.2 − Mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vd V 0V Ciss − 194 270 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 V, f = 1.0 MHz) Coss − 70 100 Transfer Capacitance f = 1.0 MHz) Crss − 29 40 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time td(on) − 10.2 20 ns Rise Time (VDD = 30 Vdc, ID = 2.0 Adc, VGS =50Vdc tr − 21 40 Turn−Off Delay Time VGS = 5.0 Vdc, RG = 9.1 W) (Note 3) td(off) − 14.3 30 Fall Time RG 9.1 W) (Note 3) tf − 15.3 30 Gate Charge (V 48 Vd I 20Ad QT − 5.1 10 nC (VDS = 48 Vdc, ID = 2.0 Adc, VGS = 5.0 Vdc) (Note 3) Q1 − 1.4 − VGS = 5.0 Vdc) (Note 3) Q2 − 2.5 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 2.0 Adc, VGS = 0 Vdc) (IS = 2.0 Adc, VGS = 0 Vdc, TJ = 150°C) (Note 3) VSD − − 0.84 0.68 1.0 − Vdc Reverse Recovery Time trr − 28.3 − ns (IS = 2.0 Adc, VGS = 0 Vdc, ta − 15.6 − (IS 2.0 Adc, VGS 0 Vdc, dIS/dt = 100 A/ms) (Note 3) tb − 12.7 − Reverse Recovery Stored Charge QRR − 0.027 − mC 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 4. Switching characteristics are independent of operating junction temperatures. |
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