NTF3055L175T3G datasheet(2/6 Pages) ONSEMI

Part #	NTF3055L175T3G

Description	Power MOSFET 2.0 A, 60 V, Logic Level

Download	6 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

2 / 6 page

NTF3055L175

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(VGS = 0 Vdc, ID = 250 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

−

72.8

74.4

−

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

−

1.0

10

mAdc

Gate−Body Leakage Current

(VGS = ± 15 Vdc, VDS = 0 Vdc)

IGSS

−

± 100

nAdc

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(VDS = VGS, ID = 250 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

−

1.7

4.2

2.0

−

Vdc

mV/

°C

Static Drain−to−Source On−Resistance (Note 3)

(VGS = 5.0 Vdc, ID = 1.0 Adc)

RDS(on)

−

155

175

m

W

Static Drain−to−Source On−Resistance (Note 3)

(VGS = 5.0 Vdc, ID = 2.0 Adc)

(VGS = 5.0 Vdc, ID = 1.0 Adc, TJ = 150°C)

VDS(on)

−

0.32

0.57

0.42

−

Vdc

Forward Transconductance (Note 3)

(VDS = 8.0 Vdc, ID = 1.5 Adc)

gfs

−

3.2

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

25 Vd

V

0V

Ciss

−

194

270

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 V,

f = 1.0 MHz)

Coss

−

70

100

Transfer Capacitance

f = 1.0 MHz)

Crss

−

29

40

SWITCHING CHARACTERISTICS

(Note 4)

Turn−On Delay Time

td(on)

−

10.2

20

ns

Rise Time

(VDD = 30 Vdc, ID = 2.0 Adc,

VGS =50Vdc

tr

−

21

40

Turn−Off Delay Time

VGS = 5.0 Vdc,

RG = 9.1 W) (Note 3)

td(off)

−

14.3

30

Fall Time

RG

9.1

W) (Note 3)

tf

−

15.3

30

Gate Charge

(V

48 Vd

I

20Ad

QT

−

5.1

10

nC

(VDS = 48 Vdc, ID = 2.0 Adc,

VGS = 5.0 Vdc) (Note 3)

Q1

−

1.4

−

VGS = 5.0 Vdc) (Note 3)

Q2

−

2.5

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 2.0 Adc, VGS = 0 Vdc)

(IS = 2.0 Adc, VGS = 0 Vdc,

TJ = 150°C) (Note 3)

VSD

−

0.84

0.68

1.0

−

Vdc

Reverse Recovery Time

trr

−

28.3

−

ns

(IS = 2.0 Adc, VGS = 0 Vdc,

ta

−

15.6

−

(IS

2.0 Adc, VGS

0 Vdc,

dIS/dt = 100 A/ms) (Note 3)

tb

−

12.7

−

Reverse Recovery Stored Charge

QRR

−

0.027

−

mC

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

4. Switching characteristics are independent of operating junction temperatures.

Similar Part No. - NTF3055L175T3G

Manufacturer	Part #	Datasheet	Description
VBsemi Electronics Co.,...	NTF3055L175T1G	1Mb / 8P	N-Channel 60-V (D-S) MOSFET

More results

Similar Description - NTF3055L175T3G

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NTDV18N06LT4G	169Kb / 8P	Power MOSFET 18 A, 60 V, Logic Level N.Channel DPAK August, 2011 ??Rev. 6
	NTF3055L108	80Kb / 6P	Power MOSFET 3.0 A, 60 V, Logic Level, N?묬hannel SOT??23 December, 2005 ??Rev. 4
	NVF3055L108T1G	117Kb / 6P	Power MOSFET 3.0 A, 60 V, Logic Level, N?묬hannel SOT??23 October, 2011 ??Rev. 6
	NTD20N06L	272Kb / 9P	MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V May, 2019 - Rev. 5
	NVF3055L108T3G	79Kb / 6P	3.0 A, 60 V, Logic Level, N.Channel SOT??23 July, 2014 ??Rev. 8
	NTP30N06L	69Kb / 8P	Power MOSFET 30 Amps, 60 Volts, Logic Level March, 2002 ??Rev. 1
	NTD15N06L	93Kb / 10P	Power MOSFET 15 Amps, 60 Volts, Logic Level September, 2003 ??Rev. 1
	NTP75N06L	72Kb / 8P	POWER MOSFET 75 AMPS, 60 VOLTS, LOGIC LEVEL April, 2001 ??Rev. 0
	NTD20N06L	89Kb / 12P	Power MOSFET 20 Amps, 60 Volts, Logic Level August, 2003 ??Rev. 1
	NTP18N06LG	91Kb / 8P	Power MOSFET 15 Amps, 60 Volts, Logic Level August, 2005 ??Rev. 4

More results

NTF3055L175T3G Datasheet(PDF) 2 Page - ON Semiconductor

NTF3055L175T3G Datasheet(HTML) 2 Page - ON Semiconductor

Similar Part No. - NTF3055L175T3G

Similar Description - NTF3055L175T3G

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL