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NTF3055L175T3 Datasheet(PDF) 1 Page - ON Semiconductor |
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NTF3055L175T3 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page Publication Order Number: NTF3055L175/D © Semiconductor Components Industries, LLC, 2004 February, 2004 − Rev. 2 1 NTF3055L175 Preferred Device Power MOSFET 2.0 A, 60 V, Logic Level N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 60 Vdc Drain−to−Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc Gate−to−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms) VGS ± 15 ± 20 Vdc Vpk Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tp ≤ 10 ms) ID ID IDM 2.0 1.2 6.0 Adc Apk Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Derate above 25 °C PD 2.1 1.3 0.014 W W W/ °C Operating and Storage Temperature Range TJ, Tstg −55 to 175 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL(pk) = 3.6 A, L = 10 mH, VDS = 60 Vdc) EAS 65 mJ Thermal Resistance − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) RqJA RqJA 72.3 114 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 10 seconds TL 260 °C 1. When surface mounted to an FR4 board using 1 ″ pad size, 1 oz. (Cu. Area 0.995 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, 2−2.4 oz. (Cu. Area 0.272 in2). D G S 1 2 3 4 2.0 A, 60 V RDS(on) = 175 mW N−Channel SOT−223 CASE 318E STYLE 3 LWW MARKING DIAGRAM 5L175 5L175 = Device Code L = Location Code WW = Work Week PIN ASSIGNMENT 3 2 1 4 Gate Drain Source Drain http://onsemi.com See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION Preferred devices are recommended choices for future use and best overall value. |
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