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FP1189 Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers

Part # FP1189
Description  High Performance 쩍-Watt HFET(Heterostructure FET)
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Manufacturer  ETC1 [List of Unclassifed Manufacturers]
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FP1189 Datasheet(HTML) 3 Page - List of Unclassifed Manufacturers

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Specifications and information are subject to change without notice.
WJ Communications, Inc
• Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
June 2003
FP1189
½-Watt HFET
Product Information
The Communications Edge
TM
Application Circuit: 870 – 960 MHz (FP1189-PCB900S)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +8 V, Ids = 125 mA, 25°
°°°C
Frequency
MHz
870
915
960
S21 – Gain
dB
20.9
20.6
19.8
S11 – Input Return Loss
dB
-10
-13
-10
S22 – Output Return Loss
dB
-5.2
-6.0
-7.6
Output P1dB
dBm
+27.5
+27.4
+27.5
Output IP3
(+12 dBm / tone, 1 MHz spacing)
dBm
+39.9
Noise Figure
dB
2.7
2.7
2.6
IS-95 Channel Power
@ -45 dBc ACPR
dBm
+21
RES
R=
ID=
10 Ohm
R2
IN D
L=
ID=
12 nH
L4
CAP
C=
ID=
3.9 pF
C13
IN D
L=
ID=
47 nH
L1
RES
R=
ID=
20 Ohm
R1
CAP
C=
ID=
68 pF
C1
CAP
C=
ID=
18 pF
C2
CAP
C=
ID=
68 p F
C3
CAP
C=
ID=
100 0 p F
C4
CAP
C=
ID=
DNP pF
C10
RES
R=
ID=
0 Ohm
L2
CAP
C=
ID=
DNP pF
C12
IN D
L=
ID=
47 nH
L3
CAP
C=
ID=
18 pF
C6
CAP
C=
ID=
68 pF
C7
CAP
C=
ID=
1000 pF
C8
CAP
C=
ID=
1e5 pF
C11
CAP
C=
ID=
DNP pF
C5
CAP
C=
ID =
68 pF
C9
1
2
SUBCKT
NET=
ID=
"FP1189"
Q1
POR T
Z=
P=
50 Ohm
1
POR T
Z=
P=
50 Ohm
2
-Vgg
Vds = 8 V @ 125 mA
14 mil GETEKTM ML200DSS (εr = 4.2)
The main microstrip line has a line impedance of 50 Ω.
Bill of Materials
Ref. Desig.
Value
Part style
Size
C1, C3, C7, C9
68 pF
Chip capacitor
0603
C2, C6
18 pF
Chip capacitor
0603
C4, C8
1000 pF
Chip capacitor
0603
C11
0.1
µF
Chip capacitor
1206
C13
3.9 pF
Chip capacitor
0603
L1, L3
47 nH
Multilayer chip inductor
0603
L2
0 Ω
Chip resistor
0603
L4
12 nH
Multilayer chip inductor
0603
R1
10 Ω
Chip resistor
0603
R2
20 Ω
Chip resistor
0603
Q1
FP1189
WJ 0.5W HFET
SOT-89
C5, C12, C10
Do Not Place


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