Electronic Components Datasheet Search |
|
SPI80N06S-08 Datasheet(PDF) 2 Page - Infineon Technologies AG |
|
SPI80N06S-08 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 8 page SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics 2) Thermal resistance, junction - case R thJC - 0.38 0.5 K/W Thermal resistance, junction - ambient, leaded R thJA -- 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area 3) -- 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 55 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=240 µA 2.1 3.0 4 Zero gate voltage drain current I DSS V DS=25 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=25 V, V GS=0 V, T j=150 °C 2) - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=80 A - 6.5 8 m Ω V GS=10 V, I D=80 A SMD version - 6.2 7.7 Transconductance 2) g fs |V DS|>2|I D|R DS(on)max, I D=80 A -73 - S footnote on page 3 Values Rev. 1.0 page 2 2004-11-30 |
Similar Part No. - SPI80N06S-08 |
|
Similar Description - SPI80N06S-08 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |