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SIGC101T170R3 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SIGC101T170R3 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 4 page SIGC101T170R3 Edited by INFINEON Technologies AI PS DD HV3, L 7771-A, Edition 2, 04.09.03 IGBT 3 Chip This chip is used for: • power module FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Applications: • drives G C E Chip Type VCE ICn Die Size Package Ordering Code SIGC101T170R3 1700V 75A 10.03 x 10.03 mm 2 sawn on foil Q67050- A4188-A001 MECHANICAL PARAMETER: Raster size 10.03 x 10.03 Emitter pad size 8 x ( 3.82 x 1.75 ) Gate pad size 1.18 x 1.09 mm Area total / active 100.6 / 75.3 mm 2 Thickness 190 µm Wafer size 150 mm Flat position 90 grd Max.possible chips per wafer 136 pcs Passivation frontside Photoimide Emitter metalization 3200 nm AlSiCu Collector metalization 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding Die bond electrically conductive glue or solder Wire bond Al, <500µm Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm Recommended Storage Environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C |
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