SIGC101T170R3

Edited by INFINEON Technologies AI PS DD HV3, L 7771-A, Edition 2, 04.09.03

IGBT

3

Chip

This chip is used for:

•

power module

FEATURES:

•

1700V Trench + Field Stop technology

•

low turn-off losses

•

short tail current

•

positive temperature coefficient

•

easy paralleling

Applications:

•

drives

G

C

E

Chip Type

Die Size

Package

Ordering Code

SIGC101T170R3

1700V

75A

10.03 x 10.03 mm

2

sawn on foil

Q67050-

A4188-A001

MECHANICAL PARAMETER:

Raster size

10.03 x 10.03

Emitter pad size

8 x ( 3.82 x 1.75 )

Gate pad size

1.18 x 1.09

mm

Area total / active

100.6 / 75.3

mm

2

Thickness

190

µm

Wafer size

150

mm

Flat position

90

grd

Max.possible chips per wafer

136 pcs

Passivation frontside

Photoimide

Emitter metalization

3200 nm AlSiCu

Collector metalization

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Die bond

electrically conductive glue or solder

Wire bond

Al, <500µm

Reject Ink Dot Size

∅ 0.65mm ; max 1.2mm

Recommended Storage Environment

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C