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SIGC12T120L Datasheet(PDF) 2 Page - Infineon Technologies AG |
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SIGC12T120L Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 4 page SIGC12T120L Edited by INFINEON Technologies AI PS DD HV3, L7621B, Edition 2, 04.09.03 MAXIMUM RATINGS: Parameter Symbol Value Unit Collector-emitter voltage, Tj=25 °C V CE 1200 V DC collector current, limited by Tjmax I C 1 ) A Pulsed collector current, tp limited by Tjmax I cpuls 24 A Gate emitter voltage V GE ±20 V Operating junction and storage temperature Tj, Tstg -55 ... +150 °C 1 ) depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Value Parameter Symbol Conditions min. typ. max. Unit Collector-emitter breakdown voltage V(BR)CES VGE=0V , IC= 0.5mA 1200 Collector-emitter saturation voltage VCE(sat) VGE=15V, IC=8A 1.35 1.65 2.05 Gate-emitter threshold voltage VGE(th) IC=300µA , VGE=VCE 5.0 5.8 6.5 V Zero gate voltage collector current ICES VCE=1200V , VGE=0V 1.07 µA Gate-emitter leakage current IGES VCE=0V , VGE=20V 120 nA Integrated gate resistor RGint -- Ω ELECTRICAL CHARACTERISTICS (tested at component): Value Parameter Symbol Conditions min. typ. max. Unit Input capacitance Ciss 605 Output capacitance Coss 37 Reverse transfer capacitance Crss V CE=25V, V GE=0V, f =1MHz 29 pF SWITCHING CHARACTERISTICS (tested at component), Inductive Load Value Parameter Symbol Conditions 1) min. typ. max. Unit Turn-on delay time t d(on) 0.05 Rise time t r 0.025 Turn-off delay time t d(off) 0.35 Fall time t f Tj=125 ° C V CC =600V, I C =8A, V GE= - 15/15V, RG= 82Ω 0.15 µs 1) values also influenced by parasitic L- and C- in measurement and package. |
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