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SIDC38D60C6 Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # SIDC38D60C6
Description  Fast switching diode chip in EMCON 3 -Technology
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SIDC38D60C6 Datasheet(HTML) 2 Page - Infineon Technologies AG

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SIDC38D60C6
Edited by INFINEON Technologies, AIM PMD D CID CLS, L4591M, Edition 1.1, 10.07.2006
Maximum Ratings
Parameter
Symbol
Condition
Value
Unit
Repetitive peak reverse voltage
V RRM
600
V
Continuous forward current limited by
Tjmax
I F
1 )
Maximum repetitive forward current
limited by Tjmax
I FRM
300
A
Operating junction and storage
temperature
Tj , Tstg
-40...+175
°C
1 ) depending on thermal properties of assembly
Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
Reverse leakage current
I R
V R=600V
Tj=25 ° C
27
µA
Cathode-Anode
breakdown Voltage
V Br
I R= 0.25 mA
Tj=25°C
600
V
Forward voltage drop
V F
I F= 15 0A
Tj=25 ° C
1.2
1.6
1.9
V
Dynamic Electrical Characteristics (verified by design/characterization), inductive load
Value
2)
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
Peak reverse recovery
current
I R M
IF=150A
di/dt=5400A/
µs
VR=300V
VGE = - 15V
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
150
180
185
A
Recovered charge
Qr
IF=150A
di/dt=5400A/
µs
VR=300V
VGE = - 15V
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
7.00
13.0
15.0
µC
Reverse recovery energy
E rec
IF=150A
di/dt=5400A/
µs
VR=300V
VGE = - 15V
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
1.95
3.50
3.95
mJ
2) values also influenced by parasitic L- and C- in measurement and package.


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