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SIDC30D60E6 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SIDC30D60E6 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 4 page Preliminary SIDC30D60E6 Edited by INFINEON Technologies AI PS DD HV3, L 4183M, Edition 1, 8.01.2002 Fast switching diode chip in EMCON-Technology This chip is used for: • EUPEC power modules and discrete devices FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Applications: • SMPS, resonant applications, drives A C Chip Type VR IF Die Size Package Ordering Code SIDC30D60E6 600V 75A 5.5 x 5.5 mm 2 sawn on foil C67047-A4679- A001 MECHANICAL PARAMETER: Raster size 5.5 x 5.5 Area total / active 30.25 / 23.33 Anode pad size 4.78 x 4.78 mm 2 Thickness 70 µm Wafer size 150 mm Flat position 180 deg Max. possible chips per wafer 482 pcs Passivation frontside Photoimide Anode metallisation 3200 nm AlSiCu Cathode metallisation 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding Die bond electrically conductive glue or solder Wire bond Al, ≤500µm Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm Recommended Storage Environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C |
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