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SIDC10D120H6 Datasheet(PDF) 2 Page - Infineon Technologies AG

Part No. SIDC10D120H6
Description  Fast switching diode chip in EMCON-Technology
Download  4 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SIDC10D120H6 Datasheet(HTML) 2 Page - Infineon Technologies AG

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Preliminary
SIDC10D120H6
Edited by INFINEON Technologies AI PS DD HV3, L 4412S, Edition 1, 8.01.2002
Maximum Ratings
Parameter
Symbol
Condition
Value
Unit
Repetitive peak reverse voltage
V RRM
1200
V
Continuous forward current limited by
Tjmax
I F
15
Single pulse forward current
(depending on wire bond configuration)
I FSM
tP = 10 ms sinusoidal
tbd
Maximum repetitive forward current
limited by Tjmax
I FRM
30
A
Operating junction and storage
temperature
Tj , Tstg
-55...+150
°C
Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
Reverse leakage current
I R
V R=1200V
Tj=25 ° C
27
µA
Cathode-Anode
breakdown Voltage
V Br
I R=0.8mA
Tj=25°C
1200
V
Forward voltage drop
V F
I F=15A
Tj=25 ° C
1.6
V
Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
t rr1
IF=15A
Tj =25°C
tbd
Reverse recovery time
t rr2
di/dt=600A/
µs
VR=600V
Tj =125°C
ns
I RRM1
Tj =25°C
17
Peak recovery current
I RRM2
IF=15A
di/dt=600A/
µs
VR= 600V
Tj =125°C
21
A
Qrr1
Tj=25 ° C
1.8
Reverse recovery charge
Qrr2
IF=15A
di/dt=600A/
µs
VR= 600V
Tj=125 ° C
3.4
µC
dirr1/dt
Tj= 25 ° C
tbd
Peak rate of fall of reverse
recovery current
dirr2/dt
IF=15A
di/dt=600A/
µs
VR= 600V
Tj=125 ° C
A/
µs
S1
Tj=25 ° C
tbd
Softness
S2
IF=15A
di/dt=600A/
µs
VR= 600V
Tj=125 ° C
1


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