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SIDC10D120H6 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. SIDC10D120H6
Description  Fast switching diode chip in EMCON-Technology
Download  4 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SIDC10D120H6 Datasheet(HTML) 1 Page - Infineon Technologies AG

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Preliminary
SIDC10D120H6
Edited by INFINEON Technologies AI PS DD HV3, L 4412S, Edition 1, 8.01.2002
Fast switching diode chip in EMCON-Technology
This chip is used for:
EUPEC power modules and
discrete devices
FEATURES:
1200V EMCON technology 120 µm chip
soft, fast switching
low reverse recovery charge
small temperature coefficient
Applications:
SMPS, resonant applications,
drives
A
C
Chip Type
VR
IF
Die Size
Package
Ordering Code
SIDC10D120H6
1200V
15A
3.2 x 3.2 mm
2
sawn on foil
Q67050-A4112-
A001
MECHANICAL PARAMETER:
Raster size
3.2 x 3.2
Area total / active
10.24 / 6.5
Anode pad size
2.48 x 2.48
mm
2
Thickness
120
µm
Wafer size
150
mm
Flat position
180
deg
Max. possible chips per wafer
1480 pcs
Passivation frontside
Photoimide
Anode metallisation
3200 nm AlSiCu
Cathode metallisation
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al,
≤500µm
Reject Ink Dot Size
∅ 0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C


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