IPU09N03LBG datasheet(4/12 Pages) INFINEON

Part #	IPU09N03LBG

Description	OptiMOS짰2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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4 / 12 page

IPD09N03LB G

IPS09N03LB G

IPU09N03LB G

IPF09N03LB G

1 Power dissipation

2 Drain current

P tot=f(T C)

I D=f(T C); V GS≥10 V

3 Safe operating area

4 Max. transient thermal impedance

I D=f(V DS); T C=25 °C; D =0

Z thJC=f(t p)

parameter: t p

parameter: D =t p/T

1 µs

10 µs

100 µs

1 ms

10 ms

DC

1

10

100

1000

0.1

1

10

100

V DS [V]

limited by on-state

resistance

single pulse

0.01

0.02

0.05

0.1

0.2

0.5

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

0.001

0.01

0.1

1

10

0000

001

t p [s]

0

10

20

30

40

50

60

0

50

100

150

200

T C [°C]

0

20

40

60

0

50

100

150

200

T C [°C]

Rev. 1.4

page 4

2006-01-12

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IPU09N03LBG Datasheet(PDF) 4 Page - Infineon Technologies AG

IPU09N03LBG Datasheet(HTML) 4 Page - Infineon Technologies AG

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