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IPP100N08S2-07 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IPP100N08S2-07 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current 1) I D T C=25 °C, V GS=10 V 100 A T C=100 °C, V GS=10 V 2) 94 Pulsed drain current 2) I D,pulse T C=25 °C 400 Avalanche energy, single pulse 2) E AS I D= 80 A 810 mJ Gate source voltage 4) V GS ±20 V Power dissipation P tot T C=25 °C 300 W Operating and storage temperature T j, T stg -55 ... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value V DS 75 V R DS(on),max (SMD version) 6.8 m Ω I D 100 A Product Summary PG-TO220-3-1 PG-TO262-3-1 PG-TO263-3-2 Type Package Ordering Code Marking IPB100N08S2-07 PG-TO263-3-2 SP0002-19044 PN0807 IPP100N08S2-07 PG-TO220-3-1 SP0002-19005 PN0807 IPI100N08S2-07 PG-TO262-3-1 SP0002-19041 PN0807 Rev. 1.0 page 1 2006-03-03 |
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