SP0000-88000 datasheet(3/8 Pages) INFINEON

Part #	SP0000-88000

Description	OptiMOS짰-T Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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3 / 8 page

IPB25N06S3-25

IPI25N06S3-25, IPP25N06S3-25

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Dynamic characteristics

2)

Input capacitance

C iss

-

1862

-

pF

Output capacitance

C oss

-

283

-

Reverse transfer capacitance

Crss

-

270

-

Turn-on delay time

t d(on)

-15

-

ns

Rise time

t r

-27

-

Turn-off delay time

t d(off)

-16

-

Fall time

t f

-27

-

Gate Charge Characteristics

2)

Gate to source charge

Q gs

-14

-

nC

Gate to drain charge

Q gd

-6

-

Gate charge total

Q g

-27

41

Gate plateau voltage

V plateau

-

7.0

-

V

Reverse Diode

2)

Diode continous forward current

I S

-

25

A

Diode pulse current

I S,pulse

-

100

Diode forward voltage

V SD

V GS=0 V, I F=25 A,

T j=25 °C

0.6

0.9

1.3

V

Reverse recovery time

t rr

V R=27.5 V, I F=I S,

di F/dt =100 A/µs

-38

ns

Reverse recovery charge

Q rr

V R=27.5 V, I F=I S,

di F/dt =100 A/µs

-30

nC

2) Defined by design. Not subject to production test.

3) See diagrams 12 and 13.

4) Qualified at -5V and +20V.

5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1) Current is limited by bondwire; with an R

thJC = 3.3 K/W the chip is able to carry 30 A at 25°C. For detailed

information see Application Note ANPS071E at www.infineon.com/optimos

T C=25 °C

Values

V GS=0 V, V DS=25 V,

f =1 MHz

V DD=27.5 V,

V GS=10 V, I D=25 A,

R G=14.8 Ω

V DD=11 V, I D=25 A,

V GS=0 to 10 V

Rev. 1.0

page 3

2006-04-03

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