IPP25N06S3-25 datasheet(2/8 Pages) INFINEON

Part #	IPP25N06S3-25

Description	OptiMOS짰-T Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2 / 8 page

IPB25N06S3-25

IPI25N06S3-25, IPP25N06S3-25

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Thermal characteristics

2)

Thermal resistance, junction - case

R thJC

-

3.3

K/W

Thermal resistance, junction -

ambient, leaded

R thJA

--

62

SMD version, device on PCB

R thJA

minimal footprint

-

62

6 cm

2 cooling area5)

--

40

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D= 1 mA

55

-

V

Gate threshold voltage

V GS(th)

V DS=V GS, I D=20 µA

2.1

3.0

4.0

Zero gate voltage drain current

I DSS

V DS=55 V, V GS=0 V,

T j=25 °C

--

1

µA

V DS=55 V, V GS=0 V,

T j=125 °C

2)

-

1

100

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

1

100

nA

Drain-source on-state resistance

RDS(on)

V GS=10 V, I D=15 A

-

21.6

25.1

mΩ

V GS=10 V, I D=15 A,

SMD version

-

21.3

24.8

Values

Rev. 1.0

page 2

2006-04-03

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IPP25N06S3-25 Datasheet(PDF) 2 Page - Infineon Technologies AG

IPP25N06S3-25 Datasheet(HTML) 2 Page - Infineon Technologies AG

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