IPD16CN10NG datasheet(4/12 Pages) INFINEON

Part #	IPD16CN10NG

Description	OptiMOS짰2 Power-Transistor Excellent gate charge x RDS(on) product (FOM)

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB16CN10N G IPD16CN10N G

IPI16CN10N G IPP16CN10N G

1 Power dissipation

2 Drain current

P tot=f(T C)

I D=f(T C); V GS≥10 V

3 Safe operating area

4 Max. transient thermal impedance

I D=f(V DS); T C=25 °C; D =0

Z thJC=f(t p)

parameter: t p

parameter: D =t p/T

single pulse

0.01

0.02

0.05

0.1

0.2

0.5

10

0

10

-1

10

-2

10

-3

10

-4

10

-5

10

1

10

0

10

-1

10

-2

t p [s]

0

20

40

60

80

100

120

0

50

100

150

200

T C [°C]

0

10

20

30

40

50

60

0

50

100

150

200

T C [°C]

1 µs

10 µs

100 µs

1 ms

10 ms

DC

10

3

10

2

10

1

10

0

10

-1

10

3

10

2

10

1

10

0

10

-1

V DS [V]

Rev. 1.01

page 4

2006-06-02

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IPD16CN10NG Datasheet(PDF) 4 Page - Infineon Technologies AG

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