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IPP06CNE8N Datasheet(PDF) 7 Page - Infineon Technologies AG |
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IPP06CNE8N Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 11 page IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=100 A pulsed parameter: T j(start) parameter: V DD 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 20 V 40 V 60 V 0 2 4 6 8 10 12 0 20 40 60 80 100 120 Q gate [nC] 75 80 85 90 95 100 -60 -20 20 60 100 140 180 T j [°C] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 150 °C 1 10 100 1000 1 10 100 1000 t AV [µs] Rev. 1.01 page 7 2006-02-14 |
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