IPP06CNE8N datasheet(7/11 Pages) INFINEON

Part #	IPP06CNE8N

Description	OptiMOS짰2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB06CNE8N G IPI06CNE8N G

IPP06CNE8N G

13 Avalanche characteristics

14 Typ. gate charge

I AS=f(t AV); R GS=25 Ω

V GS=f(Q gate); I D=100 A pulsed

parameter: T j(start)

parameter: V DD

15 Drain-source breakdown voltage

16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA

20 V

40 V

60 V

0

2

4

6

8

10

12

0

20

40

60

80

100

120

Q gate [nC]

75

80

85

90

95

100

-60

-20

20

60

100

140

180

T j [°C]

V GS

Q gate

V gs(th)

Q g(th)

Q gs

Q gd

Q sw

Q g

25 °C

100 °C

150 °C

1

10

100

1000

1

10

100

1000

t AV [µs]

Rev. 1.01

page 7

2006-02-14

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