IPD09N03LA datasheet(3/12 Pages) INFINEON

Part #	IPD09N03LA

Description	OptiMOS짰2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPD09N03LA G

IPF09N03LA G

IPS09N03LA G

IPU09N03LA G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

1235

1642

pF

Output capacitance

C oss

-

474

630

Reverse transfer capacitance

Crss

-61

92

Turn-on delay time

t d(on)

-

7.0

10

ns

Rise time

t r

-

5.6

8.4

Turn-off delay time

t d(off)

-20

30

Fall time

t f

-

3.4

5.1

Gate Charge Characteristics

6)

Gate to source charge

Q gs

-

4.3

5.7

nC

Gate charge at threshold

Q g(th)

-

2.0

2.6

Gate to drain charge

Q gd

-

2.8

4.3

Switching charge

Q sw

-

5.2

7.3

Gate charge total

Q g

-10

13

Gate plateau voltage

V plateau

-

3.5

-

V

Gate charge total, sync. FET

Q g(sync)

V DS=0.1 V,

V GS=0 to 5 V

-

8.7

12

nC

Output charge

Q oss

V DD=15 V, V GS=0 V

-10

14

Reverse Diode

Diode continous forward current

I S

-

50

A

Diode pulse current

I S,pulse

-

350

Diode forward voltage

V SD

V GS=0 V, I F=50 A,

T j=25 °C

-

0.97

1.2

V

Reverse recovery charge

Q rr

V R=15 V, I F=I S,

di F/dt =400 A/µs

-

10

nC

6) See figure 16 for gate charge parameter definition

T C=25 °C

Values

V GS=0 V, V DS=15 V,

f =1 MHz

V DD=15 V, V GS=10 V,

I D=25 A, R G=2.7 Ω

V DD=15 V, I D=25 A,

V GS=0 to 5 V

Rev. 2.0

page 3

2006-05-11

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