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IPP091N06NG Datasheet(PDF) 7 Page - Infineon Technologies AG |
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IPP091N06NG Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 10 page IPB091N06N G IPP091N06N G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=80 A pulsed parameter: T j(start) parameter: V DD 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 50 55 60 65 70 75 -60 -20 20 60 100 140 180 T j [°C] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 150 °C 10 3 10 2 10 1 10 0 10 2 10 1 10 0 t AV [µs] 12 V 30 V 48 V 0 2 4 6 8 10 12 0 2040 6080 Q gate [nC] Rev. 1.0 page 7 2006-06-20 |
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