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CY7C1361A Datasheet(PDF) 6 Page - Cypress Semiconductor

Part # CY7C1361A
Description  256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1361A Datasheet(HTML) 6 Page - Cypress Semiconductor

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CY7C1361A
CY7C1363A
Document #: 38-05259 Rev. *A
Page 6 of 26
(a) 6P, 7P, 7N, 6N, 6M,
6L, 7L, 6K, 7K,
(b) 7H, 6H, 7G, 6G, 6F,
6E, 7E, 7D, 6D,
(c) 2D, 1D, 1E, 2E, 2F,
1G, 2G, 1H, 2H,
(d) 1K, 2K, 1L, 2L, 2M,
1N, 2N, 1P, 2P
(a) 51, 52, 53, 56,
57, 58, 59, 62, 63
(b) 68, 69, 72, 73,
74, 75, 78, 79, 80
(c) 1, 2, 3, 6, 7, 8, 9,
12, 13
(d) 18, 19, 22, 23,
24, 25, 28, 29, 30
DQa
DQb
DQc
DQd
Input/
Output
Data Inputs/Outputs: First Byte is DQa. Second Byte is
DQb. Third Byte is DQc. Fourth Byte is DQd. Input data
must meet set-up and hold times around the rising edge
of CLK.
2U
3U
4U
38
39
43
for BG and AJ
version
TMS
TDI
TCK
Input
IEEE 1149.1 Test Inputs: LVTTL-level inputs. Not
available for A package version.
5U
42
for BG and AJ
version
TDO
Output
IEEE 1149.1 Test Output: LVTTL-level output. Not
available for A package version.
4C, 2J, 4J, 6J, 4R
15, 41, 65, 91
VCC
Power Supply Core Power Supply: +3.3V – 5% and +10%
3D, 5D, 3E, 5E, 3F, 5F,
3H, 5H, 3K, 5K, 3M,
5M, 3N, 5N, 3P, 5P
5, 10, 17, 21, 26,
40, 55, 60, 67, 71,
76, 90
VSS
Ground
Ground: GND.
1A, 7A, 1F, 7F, 1J, 7J,
1M, 7M, 1U, 7U
4, 11, 20, 27, 54,
61, 70, 77
VCCQ
I/O Power
Supply
Power Supply for the I/O circuitry
1B, 7B, 1C, 7C, 4D, 3J,
5J, 4L, 1R, 5R, 7R, 1T,
2T, 6T, 6U
14, 16, 66
38, 39, 42 for A
version
NC
No Connect: These signals are not internally connected.
User can leave it floating or connect it to V
CC or VSS.
256K × 36 Pin Descriptions (continued)
X36 PBGA Pins
X36 QFP Pins
Pin
Name
Type
Pin Description
512K × 18 Pin Descriptions
X18 PBGA Pins
X18 QFP Pins
Pin
Name
Type
Pin Description
4P
4N
2A, 3A, 5A, 6A, 3B,
5B, 6B, 2C, 3C, 5C,
6C, 2R, 6R, 2T, 3T, 5T,
6T
37
36
35, 34, 33, 32, 100,
99, 82, 81, 80, 48,
47, 46, 45, 44, 49,
50
92 (AJ Version)
43 (A Version)
A0
A1
A
Input-
Synchronous
Addresses: These inputs are registered and must meet
the set-up and hold times around the rising edge of CLK.
The burst counter generates internal addresses
associated with A0 and A1, during burst cycle and wait
cycle.
5L
3G
93
94
BWa
BWb
Input-
Synchronous
Byte Write Enables: A byte Write enable is LOW for a
Write cycle and HIGH for a Read cycle. BWa controls DQa.
BWb controls DQb. Data I/O are high impedance if either
of these inputs are LOW, conditioned by BWE being LOW.
4M
87
BWE
Input-
Synchronous
Write Enable: This active LOW input gates byte Write
operations and must meet the set-up and hold times
around the rising edge of CLK.
4H
88
GW
Input-
Synchronous
Global Write: This active LOW input allows a full 18-bit
Write to occur independent of the BWE and WEn lines and
must meet the set-up and hold times around the rising
edge of CLK.
4K
89
CLK
Input-
Synchronous
Clock: This signal registers the addresses, data, chip
enables, Write control and burst control inputs on its rising
edge. All synchronous inputs must meet set-up and hold
times around the clock’s rising edge.
4E
98
CE
Input-
Synchronous
Chip Enable: This active LOW input is used to enable the
device and to gate ADSP.


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