CY7C1350B
PRELIMINARY
Document #: 38-05045 Rev. **
Page 6 of 14
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ..................................
−65°C to +150°C
Ambient Temperature with
Power Applied
.................................................. −55°C to +125°C
Supply Voltage on VDD Relative to GND.........−0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State[9]
.....................................−0.5V to V
DDQ + 0.5V
DC Input Voltage[9]
..................................−0.5V to V
DDQ + 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .................................................... >200 mA
Notes:
7.
X=”Don't Care”, 1=Logic HIGH, 0=Logic LOW.
8.
Write is initiated by the combination of WE and BWSx. Bytes written are determined by BWS[3:0]. Bytes not selected during byte writes remain unaltered. All
I/Os are three-stated during byte writes.
9.
Minimum voltage equals –2.0V for pulse duration less than 20 ns.
10. TA is the case temperature.
Write Cycle Description[7, 8]
Function
WE
BWS3
BWS2
BWS1
BWS0
Read
1
X
XXX
Write
− No bytes written
011
11
Write Byte 0
− (DQ
[7:0] and DP0)
011
10
Write Byte 1
− (DQ
[15:8] and DP1)
011
01
Write Bytes 1, 0
011
00
Write Byte 2
− (DQ
[23:16] and DP2)
010
11
Write Bytes 2, 0
010
10
Write Bytes 2, 1
010
01
Write Bytes 2, 1, 0
010
00
Write Byte 3
− (DQ
[31:24] and DP3)
001
11
Write Bytes 3, 0
001
10
Write Bytes 3, 1
001
01
Write Bytes 3, 1, 0
001
00
Write Bytes 3, 2
000
11
Write Bytes 3, 2, 0
000
10
Write Bytes 3, 2, 1
000
01
Write All Bytes
000
00
Operating Range
Range
Ambient
Temperature[10]
VDD/VDDQ
Com’l
0°C to +70°C
3.3V ± 5%
Ind’l
–40°C to +85°C
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