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IPA60R385CP Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPA60R385CP Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 10 page IPA60R385CP Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 790 - pF Output capacitance C oss -38- Effective output capacitance, energy related 6) C o(er) -36- Effective output capacitance, time related 7) C o(tr) -96- Turn-on delay time t d(on) -10- ns Rise time t r -5 - Turn-off delay time t d(off) -40- Fall time t f -5 - Gate Charge Characteristics Gate to source charge Q gs -4 - nC Gate to drain charge Q gd -6 - Gate charge total Q g -17 22 Gate plateau voltage V plateau - 5.0 - V Reverse Diode Diode forward voltage V SD V GS=0 V, I F=5.2 A, T j=25 °C - 0.9 1.2 V Reverse recovery time t rr - 260 - ns Reverse recovery charge Q rr - 3.1 - µC Peak reverse recovery current I rrm -24- A 1) J-STD20 and JESD22 2) Limited only by maximum temperature 3) Pulse width t p limited by T j,max 4) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f. 5) I SD<=ID, di/dt<=400A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch. 6) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. V R=400 V, I F=I S, di F/dt =100 A/µs Values V GS=0 V, V DS=100 V, f =1 MHz V DD=400 V, V GS=10 V, I D=12 A, R G=3.3 Ω V DD=400 V, I D=5.2 A, V GS=0 to 10 V V GS=0 V, V DS=0 V to 480 V Rev. 1.5 page 3 2006-01-04 |
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