IHW30N120R datasheet(2/12 Pages) INFINEON

Part #	IHW30N120R

Description	IGBT with monolithic body diode for soft switching Applications

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Manufacturer	INFINEON [Infineon Technologies AG]

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IHW30N120R

Soft Switching Series

q

Power Semiconductors

2

Rev. 2.2

May 06

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

RthJC

0.38

Diode thermal resistance,

junction – case

RthJCD

0.37

Thermal resistance,

junction – ambient

RthJA

40

K/W

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

Static Characteristic

Collector-emitter breakdown voltage

V(BR)CES VGE=0V, IC=500µA

1200

-

Collector-emitter saturation voltage

VCE(sat)

VGE = 15V, IC=30A

Tj=25°C

Tj=125°C

Tj=175°C

-

1.55

1.75

1.85

1.75

-

Diode forward voltage

VF

VGE=0V, IF=15A

Tj=25°C

Tj=125°C

Tj=175°C

-

1.3

1.35

1.4

1.5

-

Gate-emitter threshold voltage

VGE(th)

IC=0.7mA,

VCE=VGE

5.1

5.8

6.4

V

Zero gate voltage collector current

ICES

VCE=1200V,

VGE=0V

Tj=25°C

Tj=175°C

-

5

2500

µA

Gate-emitter leakage current

IGES

VCE=0V,VGE=20V

-

100

nA

Transconductance

gfs

VCE=20V, IC=30A

-

26

-

S

Integrated gate resistor

RGint

None

Ω

Dynamic Characteristic

Input capacitance

Ciss

-

2573

-

Output capacitance

Coss

-

76

-

Reverse transfer capacitance

Crss

VCE=25V,

VGE=0V,

f=1MHz

-

17

-

pF

Gate charge

QGate

VCC=960V, IC=30A

VGE=15V

-

197

-

nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

LE

-

13

-

nH

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IHW30N120R Datasheet(PDF) 2 Page - Infineon Technologies AG

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