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IHW30N90R Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # IHW30N90R
Description  Reverse Conducting IGBT with monolithic body diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IHW30N90R Datasheet(HTML) 3 Page - Infineon Technologies AG

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IHW30N90R
Soft Switching Series
q
Power Semiconductors
3
Rev. 2.0
July 06
Dynamic Characteristic
Input capacitance
Ciss
-
2889
-
Output capacitance
Coss
-
83
-
Reverse transfer capacitance
Crss
VCE=25V,
VGE=0V,
f=1MHz
-
79
-
pF
Gate charge
QGate
VCC=720V, IC=30A
VGE=15V
-
200
-
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE
-
13
-
nH
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter
Symbol
Conditions
min.
Typ.
Max.
Unit
IGBT Characteristic
Turn-off delay time
td(off)
-
511
-
Fall time
tf
-
24
-
Turn-on energy
Eon
-
-
-
Turn-off energy
Eoff
-
1.46
-
Total switching energy
Ets
Tj=25°C
VCC=600V,
IC=30A,
VGE=0/15V,
RG= 15Ω
-
1.46
-
mJ
Switching Characteristic, Inductive Load, at Tj=175 °C
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
IGBT Characteristic
Turn-off delay time
td(off)
-
594
-
Fall time
tf
-
46
-
Turn-on energy
Eon
-
-
-
Turn-off energy
Eoff
-
2.1
-
Total switching energy
Ets
Tj=175°C
VCC=600V,
IC=30A,
VGE=0/15V,
RG= 15Ω
-
2.1
-
mJ


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