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IHW30N90R Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IHW30N90R Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 12 page IHW30N90R Soft Switching Series q Power Semiconductors 3 Rev. 2.0 July 06 Dynamic Characteristic Input capacitance Ciss - 2889 - Output capacitance Coss - 83 - Reverse transfer capacitance Crss VCE=25V, VGE=0V, f=1MHz - 79 - pF Gate charge QGate VCC=720V, IC=30A VGE=15V - 200 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13 - nH Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. Typ. Max. Unit IGBT Characteristic Turn-off delay time td(off) - 511 - Fall time tf - 24 - Turn-on energy Eon - - - Turn-off energy Eoff - 1.46 - Total switching energy Ets Tj=25°C VCC=600V, IC=30A, VGE=0/15V, RG= 15Ω - 1.46 - mJ Switching Characteristic, Inductive Load, at Tj=175 °C Value Parameter Symbol Conditions min. Typ. max. Unit IGBT Characteristic Turn-off delay time td(off) - 594 - Fall time tf - 46 - Turn-on energy Eon - - - Turn-off energy Eoff - 2.1 - Total switching energy Ets Tj=175°C VCC=600V, IC=30A, VGE=0/15V, RG= 15Ω - 2.1 - mJ |
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