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IHW20N120R2 Datasheet(PDF) 8 Page - Infineon Technologies AG |
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IHW20N120R2 Datasheet(HTML) 8 Page - Infineon Technologies AG |
8 / 12 page IHW20N120R2 Soft Switching Series Power Semiconductors 8 Rev. 1.2 May 06 0nC 50nC 100nC 150nC 0V 5V 10V 960V 240V 0V 10V 20V 10pF 100pF 1nF C rss C oss C iss QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 17. Typical gate charge ( IC=20 A) Figure 18. Typical capacitance as a function of collector-emitter voltage ( VGE=0V, f = 1 MHz) 10µs 100µs 1ms 10ms 100ms 10 -3K/W 10 -2K/W 10 -1K/W single pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 10µs 100µs 1ms 10ms 100ms 10 -2K/W 10 -1K/W single pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 tP, PULSE WIDTH tP, PULSE WIDTH Figure 19. IGBT transient thermal resistance ( D = tp / T) Figure 20. Diode transient thermal impedance as a function of pulse width ( D=tP/T) R ,( K/ W ) τ , (s ) 0.0788 1.04*10 -1 0.183 1.52*10 -2 0.162 9.51*10 -4 0.0505 4.95*10 -5 C 1= τ1/R1 R 1 R2 C 2= τ2/R2 R ,( K/ W ) τ , (s ) 0.0578 1.16*10 -1 0.1699 1.88*10 -2 0.1392 2.03*10 -3 0.087 2.38*10 -4 C 1= τ1/R1 R 1 R2 C 2= τ2/R2 |
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