IHW15N120R datasheet(8/12 Pages) INFINEON

Part #	IHW15N120R

Description	Reverse Conducting IGBT with monolithic body diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IHW15N120R

Soft Switching Series

q

Power Semiconductors

8

Rev. 2.1

July 06

0nC

50nC

100nC

0V

5V

10V

15V

960V

240V

0V

10V

20V

10pF

100pF

1nF

C

rss

C

oss

C

iss

QGE, GATE CHARGE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

(

IC=15 A)

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(

VGE=0V, f = 1 MHz)

10µs

100µs

1ms

10ms

100ms

10

-2K/W

10

-1K/W

single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

10µs

100µs

1ms

10ms

100ms

10

-2K/W

10

-1K/W

single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

tP, PULSE WIDTH

Figure 19. IGBT transient thermal

resistance

(

D = tp / T)

Figure 20. Typical Diode transient thermal

impedance as a function of pulse width

(

D=tP/T)

R

,( K/ W )

τ , (s )

0.1357

2.96*10

-2

0.1207

5.46*10

-3

0.1026

5.79*10

-4

0.0211

8.11*10

-5

C 1=

τ1/R1

R 1

R2

C 2=

τ2/R2

R

,( K/ W )

τ , (s )

0.0379

8.23*10

-2

0.1588

1.32*10

-2

0.119

1.47*10

-3

0.064

1.74*10

-4

C 1=

τ1/R1

R 1

R2

C 2=

τ2/R2

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IHW15N120R Datasheet(PDF) 8 Page - Infineon Technologies AG

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