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SD56120M Datasheet(PDF) 1 Page - STMicroelectronics

Part No. SD56120M
Description  RF POWER TRANSISTORS The LdmoST FAMILY
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SD56120M Datasheet(HTML) 1 Page - STMicroelectronics

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March, 11 2003
SD56120M
RF POWER TRANSISTORS
The
LdmoST FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION, PUSH-
PULL
• POUT = 120 W WITH 13 dB gain @ 860 MHz /32V
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
DESCRIPTION
The SD56120M is a common source N-Channel en-
hancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0 GHz.
The SD56120M is designed for high gain and broad-
band performance operating in common source
mode at 32 V. Its internal matching makes it ideal for
TV broadcast applications requiring high linearity.
PIN CONNECTION
1
3
5
2
1. Drain
2. Drain
3. Source
4. Gate
5. Gate
4
M252
epoxy sealed
ORDER CODE
SD56120M
BRANDING
SD56120M
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol
Parameter
Value
Unit
V(BR)DSS
Drain-Source Voltage
65
V
VGS
Gate-Source Voltage
± 20
V
ID
Drain Current
14
A
PDISS
Power Dissipation (@ Tc = 70°C)
236
W
Tj
Max. Operating Junction Temperature
200
°C
TSTG
Storage Temperature
-65 to +150
°C
THERMAL DATA
Rth(j-c)
Junction -Case Thermal Resistance
0.55
°C/W


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