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MAPLST2122-060CF Datasheet(PDF) 1 Page - Tyco Electronics

Part No. MAPLST2122-060CF
Description  RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V
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Maker  MACOM [Tyco Electronics]
Homepage  http://www.macom.com
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MAPLST2122-060CF Datasheet(HTML) 1 Page - Tyco Electronics

   
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RF Power Field Effect Transistor
LDMOS, 2110 — 2170 MHz, 60W, 28V
Features
Designed for W-CDMA base station
applications in the 2.1 to 2.2 GHz Frequency
Band. Suitable for TDMA, CDMA, and
multicarrier power amplifier applications.
60W output power at P1dB (CW)
12dB Minimum Gain at P1dB (CW)
W-CDMA Typical Performance:
(28VDC, -45dB ACPR @ 4.096MHz)
Output Power: 7.5W (typ.)
Gain: 12dB (typ.)
Efficiency: 16% (typ.)
10:1 VSWR Ruggedness (CW @ 60W,
28V, 2110MHz)
Package Style
4/6/2005
Preliminary
Maximum Ratings
Parameter
Symbol
Rating
Units
Drain—Source Voltage
V
DSS
65
Vdc
Gate—Source Voltage
V
GS
20
Vdc
Total Power Dissipation @ TC = 25 °C
P
D
175
W
Storage Temperature
T
STG
-40 to +150
°C
Junction Temperature
T
J
+200
°C
Characteristic
Symbol
Thermal Resistance, Junction to Case
RΘJC
Max
1.0
Unit
ºC/W
Thermal Characteristics
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.
MAPLST2122-060CF


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